features low cost diffused junction mechanical data case: jedec do-41, molded plastic method 208 mounting: any ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. maximum peak repetitive reverse voltage v rrm v ma x imu m rms v o ltag e v rms v ma x imu m dc bloc kin g v oltag e v dc v maximum average forw ard rectified current 9.5mm lead length @t a =75 peak forw ard surge current 10ms single half-sine-w ave superimplsed on rated load @t j =125 ma x imu m ins tan ta ne ou s f or w a r d v olta ge @ 1.0a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 maximum reverse recovery time (note1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r jl <d operating junction temperature range t j storage temperature range t stg 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. 3. thermal resistance junction to ambient. i f(av) 20 i r 600 20 15 note:1. measured with i f =0.5a, i r =1a, i rr =0.25a. high current capability polarity: color band denotes cathode weight: 0.012 ounces, 0.34 grams 140 i fsm s im ilar s olvents easily cleaned with freon, alcohol, lsopropand and - 55 ----- + 150 h i gh eff i c i e n cy r e c t i f i er s v o l t a g e r a n g e : 2 00 - - - 600 v current: 1.0 a maximum ratings and electrical characteristics do - 4 1 low leakage low forward voltage drop 200 400 a eu02z(z)---EU02A(z) 280 400 600 420 units a a 1.0 15.0 1.4 - 55 ----- + 150 10.0 300.0 100 terminals: axial leads,solderable per mil-std-202, eu02z EU02A eu02 200 dimensions in millimeters www.diode.kr diode semiconductor korea
amperes amperes ambient temperature, average forward rectified current instantaneous forward current instantaneous forward voltage, volts fi g. 5--typi cal juncti on capaci tance peak forward surge current amperes number of cycles at 60hz junction capacitance pf reverse voltage,volts eu02z(z)--- EU02A(z) fi g. 1 -- test ci rcui t di agram and reverse recovery ti me characteri sti c fi g. 4 -- peak forward surge current set time base for 10/20 ns/cm fig.2 -- typical forward characteristic fig.3 -- forward derating curve notes:1.rise time = 7ns max.input impedance =1m . 22pf. jjjj 2.rise time =10ns max.source impedance=50 . pulse generator (note2) d.u.t. 1 nonin- ductive 50 n 1. 10 n1. oscilloscope (note1) (+) 25vdc (approx) (-) t rr - 1 . 0 a - 0 . 2 5 a 0 + 0 . 5 a 1cm 0 25 50 75 100 125 150 0 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 single phase half wave 60hz resistive or inductive load 0 0 . 01 0 . 04 0 . 1 1 . 0 10 100 t j =25 pulse width=300 t j =25 1 2 4 10 20 40 60 100 200 0 . 1 0 . 2 0 . 4 1 2 4 10 40 1 0 0 20 eu02z,eu02 EU02A diode semiconductor korea www.diode.kr
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